MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P5MNC2P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 2,2
  • RDS(ON) @4,5V [mΩ]: 3,6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 85
  • Manufacturer: Eris
P5MNC2P2

TLMPG40HA

  • Package: SOT-23S
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 4000
  • RDS(ON) @4,5V [mΩ]: 5500
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -0.5
  • Manufacturer: Eris
TLMPG40HA

TPMNG30HA

  • Package: SOT-323
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 3600
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TPMNG30HA

P3MNC3P9

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 3,9
  • RDS(ON) @4,5V [mΩ]: 6,1
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNC3P9

P5MNM5P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5,5
  • RDS(ON) @4,5V [mΩ]: 7,8
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 70
  • Manufacturer: Eris
P5MNM5P5

P5MNC6P3

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 6,3
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 52
  • Manufacturer: Eris
P5MNC6P3

P5MNG8P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 8,5
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
P5MNG8P5

P3MNG020

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 24
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 33
  • Manufacturer: Eris
P3MNG020

P5MNG4P4

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 65
  • RDS(ON) @10V [mΩ]: 4,4
  • RDS(ON) @4,5V [mΩ]: 7,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 95
  • Manufacturer: Eris
P5MNG4P4

NJMNB7P2

  • Package: DFN2X3A-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 7,2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 11
  • Manufacturer: Eris
NJMNB7P2
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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