RF-Switch

Nisshinbo Micro Devices provides RF switches that cover various communication applications such as 5G, Wi-Fi 6/6E and so on. The advantages of high performance switches are low insertion loss, high isolation and high linearity even if high frequency band by our unique GaAs process. Furthermore, integrated ESD protection elements achieve excellent ESD robustness.They also offer automotive grade products. In addition, Nisshinbo develop RF devices by SOI process.

There are 10 of 86 products shown.

NT1821GVAE1S

  • Package (RF-Switch): DFN6
  • Features: 1.0 to 7.125 GHz High Isolation SPDT Switch
  • P-1dB [dBm]: 31
  • Insertion Loss [dB]: Typ. 0.60 dB @ 2.4 to 2.5 GHz 0.50 dB @ 4.9 to 5.9 GHz 0.58 dB @ 5.9 to 7.125 GHz
  • Isolation [dB]: Typ. 40 dB @ 2.4 to 2.5 GHz 38 dB @ 4.9 to 5.9 GHz 42 dB @ 5.9 to 7.125 GHz
  • Manufacturer: Nisshinbo
NT1821GVAE1S

NT1819NAAE2S

  • Features: Absorptive High Isolation SPDT Switch
  • P-1dB [dBm]: 31
  • Insertion Loss [dB]: Typ. 0.70/0.80/0.85/0.90/1.2 dB @0.7/3.85/4.7/6.0/7.125 GHz
  • Isolation [dB]: Typ. 70/62/60/55/51 dB @ 0.7/3.85/4.7/6.0/7.125 GHz
  • Manufacturer: Nisshinbo
NT1819NAAE2S

NT1822GVAE1S

  • Package (RF-Switch): DFN6
  • Features: 1.0 to 7.125 GHz High Isolation SPDT Switch
  • P-1dB [dBm]: 31
  • Insertion Loss [dB]: 0.60 dB@2.4 to 2.5 GHz
  • Isolation [dB]: Typ. 40 dB@2.4 to 2.5 GHz
  • Manufacturer: Nisshinbo
NT1822GVAE1S

SGM11102G

  • Package (RF-Switch): DFN6
  • Features: SPDT Switch for High Power Applications
  • P-1dB [dBm]: 39
  • Insertion Loss [dB]: 0,3@2,7GHz
  • Isolation [dB]: 30@2,7GHz
  • Manufacturer: SG Micro
SGM11102G

SGM11102S

  • Package (RF-Switch): LGA6
  • Features: High Isolation SPDT RF Switch
  • P-1dB [dBm]: 27
  • Insertion Loss [dB]: 0,6@2,7GHz
  • Isolation [dB]: 55@2,7GHz
  • Manufacturer: SG Micro
SGM11102S

SGM11103S

  • Package (RF-Switch): LGA10
  • Features: High Isolation SP3T RF Switch
  • P-1dB [dBm]: 30
  • Insertion Loss [dB]: 0,56@2,7GHz
  • Isolation [dB]: 50@2,7GHz
  • Manufacturer: SG Micro
SGM11103S

SGM11104S

  • Package (RF-Switch): LGA14
  • Features: High Isolation SP4T RF Switch
  • P-1dB [dBm]: 30
  • Insertion Loss [dB]: 0,49@2,7GHz
  • Isolation [dB]: 46@2,7GHz
  • Manufacturer: SG Micro
SGM11104S

SGM11108M

  • Package (RF-Switch): QFN14
  • Features: SP8T LTE Switch with MIPI RFFE Interface
  • P-1dB [dBm]: 27
  • Insertion Loss [dB]: 0,65@2,7GHz
  • Isolation [dB]: 30@2,7GHz
  • Manufacturer: SG Micro
SGM11108M

SGM11106C

  • Package (RF-Switch): QFN14
  • Features: SP6T LTE Switch with MIPI RFFE Interface
  • P-1dB [dBm]: 27
  • Insertion Loss [dB]: 0,65@2,7GHz
  • Isolation [dB]: 20@2,7GHz
  • Manufacturer: SG Micro
SGM11106C

SGM11112M

  • Package (RF-Switch): QFN20
  • Features: SP12T LTE Switch with MIPI RFFE Interface
  • P-1dB [dBm]: 26
  • Insertion Loss [dB]: 0,75@2,7GHz
  • Isolation [dB]: 31@2,7GHz
  • Manufacturer: SG Micro
SGM11112M
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