MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

D1MNC5P0

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 5
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
D1MNC5P0

P3MND014

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 13,5
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MND014

N3MNA4P3

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 12
  • RDS(ON) @4,5V [mΩ]: 4,3
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNA4P3

N1MNB002

  • Package: DFN3.3X3.3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 50
  • Manufacturer: Eris
N1MNB002

N3MNB5P8

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 5,8
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNB5P8

TNMNC039

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 39
  • RDS(ON) @4,5V [mΩ]: 43
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5,8
  • Manufacturer: Eris
TNMNC039

N8MNC019

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 19
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
N8MNC019

T2MNM7P6

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7,6
  • RDS(ON) @4,5V [mΩ]: 11,4
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
T2MNM7P6

P6MNC9P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P6MNC9P0

P3MPC028

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 28
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -25,7
  • Manufacturer: Eris
P3MPC028
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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