MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

D1MNM020

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
D1MNM020

S8MNC8P5

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 8.5
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 15
  • Manufacturer: Eris
S8MNC8P5

P3MNC011A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC011A

TQMPB600

  • Package: SOT-523
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 600
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: -0,4
  • Manufacturer: Eris
TQMPB600

D1MPD5P8

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 5,8
  • RDS(ON) @4,5V [mΩ]: 8,3
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -90
  • Manufacturer: Eris
D1MPD5P8

P3MPG065

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 65
  • RDS(ON) @4,5V [mΩ]: 90
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -14
  • Manufacturer: Eris
P3MPG065

P5MND3P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 3,2
  • RDS(ON) @4,5V [mΩ]: 5,3
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 114
  • Manufacturer: Eris
P5MND3P2

P5MNP051

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 51
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 25
  • Manufacturer: Eris
P5MNP051

P5MND1P8

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 1,8
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 195
  • Manufacturer: Eris
P5MND1P8

T2MNM012

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 11,5
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
T2MNM012
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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