MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

S8MBC020A

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 20 / 32
  • RDS(ON) @4,5V [mΩ]: 30 / 46
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 7,5 / -6
  • Manufacturer: Eris
S8MBC020A

D1MPG048

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 48
  • RDS(ON) @4,5V [mΩ]: 65
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -16
  • Manufacturer: Eris
D1MPG048

S8MNG040

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 40
  • RDS(ON) @4,5V [mΩ]: 47
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4,5
  • Manufacturer: Eris
S8MNG040

S8MPC017

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 17
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -10
  • Manufacturer: Eris
S8MPC017

P5MNM4P4

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 4.4
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 142
  • Manufacturer: Eris
P5MNM4P4

D1MNG6P0

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 7,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
D1MNG6P0

TNMNB027

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMNB027

P5MNC5P1

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 5,1
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
P5MNC5P1

S8MNM085

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
S8MNM085

P5MNM8P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 8
  • RDS(ON) @4,5V [mΩ]: 12,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 91
  • Manufacturer: Eris
P5MNM8P0
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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