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Schottky diodes/rectifier have a low total capacitive charge, which reduces switching losses and at the same time enables a fast switching process. Schottky diodes based on silicon carbide (SiC) are characterized by constant properties in contrast to silicon (Si) based diodes with a short recovery time, where the...
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 10 A
IFSM max. [A]: 60 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 36 nC
VF @ IF max. [V]: 1.8 V
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 8 A
IFSM max. [A]: 56 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 30 nC
VF @ IF max. [V]: 1.8 V
Package: TO-220AC
VRRM [V]: 1,200 V
IF [A]: 10 A
IFSM max. [A]: 60 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 56.5 nC
VF @ IF max. [V]: 1.8 V
Package: ITO-220AC
VRRM [V]: 650 V
IF [A]: 6 A
IFSM max. [A]: 40 A
IR @ VRRM max. [μA]: 50 μA
QC typ. [nC]: 23 nC
VF @ IF max. [V]: 1.7 V
Package: TO-220AC
VRRM [V]: 600 V
IF [A]: 4 A
IFSM max. [A]: 75 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 15 nC
VF @ IF max. [V]: 1.7 V
Package: SMB (DO-214AA)
IP typ.[mA]: 60 mA
Ip [mA]: 54 mA ... 66 mA
V [V]: 190 V
T [°C]: -55 °C ... 150 °C
Package: SMA (DO-214AC)
IP typ.[mA]: 60 mA
Ip [mA]: 54 mA ... 66 mA
V [V]: 190 V
T [°C]: -55 °C ... 150 °C
Package: SOD-123FL
IP typ.[mA]: 8.2 mA
Ip [mA]: 6.56 mA ... 9.8 mA
V [V]: 50 V
T [°C]: -40 °C ... 150 °C
Package: SOD-123FL
IP typ.[mA]: 0.7 mA
Ip [mA]: 0.6 mA ... 0.9 mA
V [V]: 100 V
T [°C]: -40 °C ... 150 °C
Package: SOD-123FL
IP typ.[mA]: 0.3 mA
Ip [mA]: 0.2 mA ... 0.4 mA
V [V]: 100 V
T [°C]: -40 °C ... 150 °C
Package: SOD-123FL
IP typ.[mA]: 3.5 mA
Ip [mA]: 3 mA ... 4.1 mA
V [V]: 100 V
T [°C]: -40 °C ... 150 °C
Package: SOD-123FL
IP typ.[mA]: 15 mA
Ip [mA]: 12 mA ... 18 mA
V [V]: 50 V
T [°C]: -40 °C ... 150 °C
Package: DO-35
IP typ.[mA]: 8.2 mA
Ip [mA]: 6.56 mA ... 9.8 mA
V [V]: 50 V
T [°C]: -30 °C ... 150 °C
Package: SOD-123FL
IP typ.[mA]: 0.1 mA
Ip [mA]: 0.05 mA ... 0.21 mA
V [V]: 100 V
T [°C]: ... 150 °C
Package: DO-35
IP typ.[mA]: 4.5 mA
Ip [mA]: 3.9 mA ... 5.1 mA
V [V]: 50 V
T [°C]: -30 °C ... 150 °C
Package: DO-35
IP typ.[mA]: 3.5 mA
Ip [mA]: 3 mA ... 4.1 mA
V [V]: 50 V
T [°C]: ... 150 °C
Package: DO-35
IP typ.[mA]: 1.5 mA
Ip [mA]: 1.28 mA ... 1.7 mA
V [V]: 100 V
T [°C]: -30 °C ... 150 °C
Package: DO-35
IP typ.[mA]: 12 mA
Ip [mA]: 9.6 mA ... 14.4 mA
V [V]: 50 V
T [°C]: -30 °C ... 150 °C
Package: PPAK5X6
Configuration: Dual
MOSFET Type: N+P
VDS [V]: 40 / -40
RDS(ON) @10V [mΩ]: 11,5 / 30
RDS(ON) @4,5V [mΩ]: 16 / 45
VGS max, [V]: ±20
ID @T=25°C [A]: 42 / -27
A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount...
Package: PPAK5X6
Configuration: Single
MOSFET Type: N
VDS [V]: 80
RDS(ON) @10V [mΩ]: 12
RDS(ON) @4,5V [mΩ]: -
VGS max, [V]: ±20
ID @T=25°C [A]: 82
Package: PPAK5X6
Configuration: Single
MOSFET Type: N
VDS [V]: 60
RDS(ON) @10V [mΩ]: 3
RDS(ON) @4,5V [mΩ]: 4,5
VGS max, [V]: ±20
Package: TO-252 (D-PAK)
Configuration: Single
MOSFET Type: N
VDS [V]: 30
RDS(ON) @10V [mΩ]: 5,1
RDS(ON) @4,5V [mΩ]: 11
VGS max, [V]: ±20
ID @T=25°C [A]: 54
Package: LFPAK8080
Configuration: Single
MOSFET Type: N
VDS [V]: 40
RDS(ON) @10V [mΩ]: 0,7
RDS(ON) @4,5V [mΩ]: -
VGS max, [V]: ±20
ID @T=25°C [A]: 455