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• 24-216/T1D-AP2Q2HY/2A/EU

  • Binning Struktur: x=0.304 y=0.3005
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 84,5mcd

• 24-216/T1D-APQHY/2A

  • Binning Struktur: x=0.304 y=0.3005
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 126mcd

• 24-216/T1D-APQHY/2T/EU

  • Binning Struktur: x=0.304 y=0.3005
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 126mcd

• 24-216/T1D-APQHY/2T

  • Binning Struktur: x=0.304 y=0.3005
  • IF [mA]: 5 V
  • VF [V]: 3.5 V
  • lum. Intensity: 126mcd

• 24-216/W1D-APQHY/2A/EU

  • Binning Struktur: x=0.304 y=0.3005
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 126mcd

• 24-216/T1D-AQ1R2HY/2A

  • Binning Struktur: x=0.304 y=0.3005
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 126mcd

• 24-216/Y5C-AP1Q2B/2A

  • wavelength [nm]: 585.5~594.5
  • IF [mA]: 20 V
  • VF [V]: 2 V
  • lum. Intensity: 78,5mcd

• 99-216/R6C-AP2R1B/2C

  • wavelength [nm]: 617.5~633.5
  • IF [mA]: 20 V
  • VF [V]: 2 V
  • lum. Intensity: 98,5mcd
  • View: Side

• 99-216/RSC-AT1U2B23/2H

  • wavelength [nm]: 617.5~633.5
  • IF [mA]: 50 V
  • VF [V]: 2.2 V
  • lum. Intensity: 500mcd
  • View: Side

• 99-216-BAP-RVAABBN0E-2C-CS

  • Binning Struktur: X:0.276-0.212 Y:0.275-0.324
  • IF [mA]: 20 V
  • VF [V]: 3.3 V
  • lum. Intensity: 1960mcd
  • View: Side

• MT19-217/G7C-AN2Q1B/3T

  • wavelength [nm]: 569.5~577.5
  • IF [mA]: 20 V
  • VF [V]: 2 V
  • lum. Intensity: 63mcd
  • View: Top

• MT19-217/R6C-AL1M2VY/3T

  • wavelength [nm]: 617.5~633.5
  • IF [mA]: 5 V
  • VF [V]: 2 V
  • lum. Intensity: 20mcd
  • View: Top

• MT19-218/T3D-CQ2R2B11Y/3T

  • Binning Struktur: x=0.294 y=0.286
  • IF [mA]: 5 V
  • VF [V]: 2.7 V
  • lum. Intensity: 135mcd
  • View: Top

• MT19-218/GHC-YQ1R1QY/3T

  • wavelength [nm]: 520~535
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 106mcd
  • View: Top

• 99-218/B2C-AQ1Q2DY/2C

  • wavelength [nm]: 464.5~476.5
  • IF [mA]: 25 V
  • VF [V]: 3 V
  • lum. Intensity: 92mcd
  • View: Side

• 99-218-BUT-MVAWBWA7E-2G-CS

  • Binning Struktur: X:0.2570 Y:0.2420
  • IF [mA]: 30 V
  • VF [V]: 3.2 V
  • lum. Intensity: 1960mcd
  • View: Side

• 99-218G-RPHC-B0U1V2D6E-2G-CS

  • wavelength [nm]: 617.5~629.5
  • IF [mA]: 20 V
  • VF [V]: 2.2 V
  • lum. Intensity: 785mcd
  • View: Side

• 66-219/T2D-CS1T1B5Y/3C

  • Binning Struktur: x=0.294 y=0.287
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 270mcd
  • View: Side

• 66-219/T2D-KR2S2B5Y/3C

  • Binning Struktur: x=0.314 y=0.315
  • IF [mA]: 5 V
  • VF [V]: 2.9 V
  • lum. Intensity: 212,5mcd

• PT15-21B/TR8

  • Mounting: Photo Transistor
  • wavelength [nm] max.: 1,100 nm
  • wavelength [nm] min.: 730 nm
  • peak Wavelength [nm]: 940 nm
  • Package (Optische Sensoren): SMD
  • dark current: 100nA

• PT15-21B-63/TR8

  • Mounting: Photo Transistor
  • wavelength [nm] max.: 1,100 nm
  • wavelength [nm] min.: 730 nm
  • peak Wavelength [nm]: 940 nm
  • Package (Optische Sensoren): SMD
  • dark current: 100nA

• PT17-21B/L41/TR8

  • Mounting: Photo Transistor
  • wavelength [nm] max.: 1,100 nm
  • wavelength [nm] min.: 730 nm
  • peak Wavelength [nm]: 940 nm
  • Package (Optische Sensoren): SMD
  • dark current: 100nA

• PT19-21B/L41/TR8

  • Mounting: Photo Transistor
  • wavelength [nm] max.: 1,100 nm
  • wavelength [nm] min.: 730 nm
  • peak Wavelength [nm]: 940 nm
  • Package (Optische Sensoren): SMD
  • dark current: 100nA

• PT26-21B/TR8

  • Mounting: Photo Transistor
  • wavelength [nm] max.: 1,100 nm
  • wavelength [nm] min.: 730 nm
  • peak Wavelength [nm]: 940 nm
  • Package (Optische Sensoren): SMD
  • dark current: 100nA

• PT42-21B/TR8

  • Mounting: Photo Transistor
  • wavelength [nm] max.: 1,100 nm
  • wavelength [nm] min.: 730 nm
  • peak Wavelength [nm]: 940 nm
  • Package (Optische Sensoren): SMD
  • dark current: 100nA