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• CRD S-223T

  • Package: SOD-123FL
  • IP typ.[mA]: 22 mA
  • Ip [mA]: 20 mA ... 25 mA
  • V [V]: 30 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-202T

  • Package: SOD-123FL
  • IP typ.[mA]: 2 mA
  • Ip [mA]: 1.68 mA ... 2.3 mA
  • V [V]: 100 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-183T

  • Package: SOD-123FL
  • IP typ.[mA]: 18 mA
  • Ip [mA]: 16 mA ... 20 mA
  • V [V]: 50 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-152T

  • Package: SOD-123FL
  • IP typ.[mA]: 1.5 mA
  • Ip [mA]: 1.28 mA ... 1.7 mA
  • V [V]: 100 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-153T

  • Package: SOD-123FL
  • IP typ.[mA]: 15 mA
  • Ip [mA]: 12 mA ... 18 mA
  • V [V]: 50 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-123T

  • Package: SOD-123FL
  • IP typ.[mA]: 12 mA
  • Ip [mA]: 9.6 mA ... 14.4 mA
  • V [V]: 50 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-103T

  • Package: SOD-123FL
  • IP typ.[mA]: 10 mA
  • Ip [mA]: 8 mA ... 12.4 mA
  • V [V]: 50 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-102T

  • Package: SOD-123FL
  • IP typ.[mA]: 1 mA
  • Ip [mA]: 0.88 mA ... 1.3 mA
  • V [V]: 100 V
  • T [°C]: -40 °C ... 150 °C

• CRD S-101T

  • Package: SOD-123FL
  • IP typ.[mA]: 0.1 mA
  • Ip [mA]: 0.05 mA ... 0.21 mA
  • V [V]: 100 V
  • T [°C]: ... 150 °C

• CRD E-822

  • Package: DO-35
  • IP typ.[mA]: 8.2 mA
  • Ip [mA]: 6.56 mA ... 9.8 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-701

  • Package: DO-35
  • IP typ.[mA]: 0.7 mA
  • Ip [mA]: 0.6 mA ... 0.9 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-562

  • Package: DO-35
  • IP typ.[mA]: 5.6 mA
  • Ip [mA]: 5 mA ... 6.5 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-452

  • Package: DO-35
  • IP typ.[mA]: 4.5 mA
  • Ip [mA]: 3.9 mA ... 5.1 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-501

  • Package: DO-35
  • IP typ.[mA]: 0.5 mA
  • Ip [mA]: 0.4 mA ... 0.6 mA
  • V [V]: 100 V
  • T [°C]: ... 150 °C

• CRD E-301

  • Package: DO-35
  • IP typ.[mA]: 0.3 mA
  • Ip [mA]: 0.2 mA ... 0.4 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-352

  • Package: DO-35
  • IP typ.[mA]: 3.5 mA
  • Ip [mA]: 3 mA ... 4.1 mA
  • V [V]: 50 V
  • T [°C]: ... 150 °C

• CRD E-272

  • Package: DO-35
  • IP typ.[mA]: 2.7 mA
  • Ip [mA]: 2.28 mA ... 3.1 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-202

  • Package: DO-35
  • IP typ.[mA]: 2 mA
  • Ip [mA]: 1.68 mA ... 2.3 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-153

  • Package: DO-35
  • IP typ.[mA]: 15 mA
  • Ip [mA]: 12 mA ... 18 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-152

  • Package: DO-35
  • IP typ.[mA]: 1.5 mA
  • Ip [mA]: 1.28 mA ... 1.7 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-123

  • Package: DO-35
  • IP typ.[mA]: 12 mA
  • Ip [mA]: 9.6 mA ... 14.4 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-102

  • Package: DO-35
  • IP typ.[mA]: 1 mA
  • Ip [mA]: 0.88 mA ... 1.3 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-103

  • Package: DO-35
  • IP typ.[mA]: 10 mA
  • Ip [mA]: 8 mA ... 12.4 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-101

  • Package: DO-35
  • IP typ.[mA]: 0.1 mA
  • Ip [mA]: 0.05 mA ... 0.21 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• MOSFETs

  A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount...