Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016
  • VDA 6.3

There are 10 of 2556 products shown.

P3MND014

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 13,5
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MND014

TNMNC041

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 41
  • RDS(ON) @4,5V [mΩ]: 45
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5,8
  • Manufacturer: Eris
TNMNC041

N3MNA4P3

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 12
  • RDS(ON) @4,5V [mΩ]: 4,3
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNA4P3

N1MNB002

  • Package: DFN3.3X3.3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 50
  • Manufacturer: Eris
N1MNB002

TNMNC039

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 39
  • RDS(ON) @4,5V [mΩ]: 43
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5,8
  • Manufacturer: Eris
TNMNC039

T2MNM7P6

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7,6
  • RDS(ON) @4,5V [mΩ]: 11,4
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
T2MNM7P6

P5MNM9P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,5
  • RDS(ON) @4,5V [mΩ]: 14,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 58
  • Manufacturer: Eris
P5MNM9P5

P3MPC028

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 28
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -25,7
  • Manufacturer: Eris
P3MPC028

T2MNM9P7

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,7
  • RDS(ON) @4,5V [mΩ]: 14,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
T2MNM9P7

P3MBC011

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 11 / 22
  • RDS(ON) @4,5V [mΩ]: 17,6 / 32
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30 / -20
  • Manufacturer: Eris
P3MBC011