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Package: TO-220AB
VRRM [V]: 50 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 1,000 μA
VF @ IF max. [V]: 0.8 V
Package: TO-220AB
VRRM [V]: 45 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 1,000 μA
VF @ IF max. [V]: 0.7 V
Package: TO-220AB
VRRM [V]: 60 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 1,000 μA
VF @ IF max. [V]: 0.8 V
Package: TO-220AB
VRRM [V]: 80 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 500 μA
VF @ IF max. [V]: 0.85 V
Package: TO-220AB
VRRM [V]: 100 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 500 μA
VF @ IF max. [V]: 0.85 V
Package: TO-220AB
VRRM [V]: 90 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 500 μA
VF @ IF max. [V]: 0.85 V
Package: TO-220AB
VRRM [V]: 150 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 500 μA
VF @ IF max. [V]: 0.95 V
Package: TO-220AB
VRRM [V]: 200 V
IF [A]: 40 A
IFSM max. [A]: 200 A
IR @ VRRM max. [μA]: 500 μA
VF @ IF max. [V]: 0.95 V
Schottky diodes/rectifier have a low total capacitive charge, which reduces switching losses and at the same time enables a fast switching process. Schottky diodes based on silicon carbide (SiC) are characterized by constant properties in contrast to silicon (Si) based diodes with a short recovery time, where the...
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 4 A
IFSM max. [A]: 30 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 11 nC
VF @ IF max. [V]: 1.7 V
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 5 A
IFSM max. [A]: 35 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 17 nC
VF @ IF max. [V]: 1.8 V
Package: TO-252 (D-PAK)
VRRM [V]: 650 V
IF [A]: 5 A
IFSM max. [A]: 60 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 23 nC
VF @ IF max. [V]: 1.8 V
Package: TO-220AC
VRRM [V]: 1,200 V
IF [A]: 5 A
IFSM max. [A]: 35 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 36 nC
VF @ IF max. [V]: 1.8 V
Package: TO-252 (D-PAK)
VRRM [V]: 1,200 V
IF [A]: 5 A
IFSM max. [A]: 50 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 36 nC
VF @ IF max. [V]: 1.7 V
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 6 A
IFSM max. [A]: 42 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 23 nC
VF @ IF max. [V]: 1.8 V
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 10 A
IFSM max. [A]: 60 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 36 nC
VF @ IF max. [V]: 1.8 V
Package: TO-220AC
VRRM [V]: 650 V
IF [A]: 8 A
IFSM max. [A]: 56 A
IR @ VRRM max. [μA]: 100 μA
QC typ. [nC]: 30 nC
VF @ IF max. [V]: 1.8 V
Package: SOT-23S
Configuration: Single
MOSFET Type: N
VDS [V]: 30
RDS(ON) @10V [mΩ]: 24
RDS(ON) @4,5V [mΩ]: 34
VGS max, [V]: ±20
ID @T=25°C [A]: 6,5
Package: SOT-23S
Configuration: Single
MOSFET Type: N
VDS [V]: 20
RDS(ON) @4,5V [mΩ]: 65
VGS max, [V]: ±10
ID @T=25°C [A]: 4
Package: SOT-23
Configuration: Single
MOSFET Type: P
VDS [V]: -20
RDS(ON) @4,5V [mΩ]: 65
VGS max, [V]: ±10
ID @T=25°C [A]: -4,.1
Package: SOT-23S
Configuration: Single
MOSFET Type: P
VDS [V]: -20
RDS(ON) @4,5V [mΩ]: 85
VGS max, [V]: ±10
ID @T=25°C [A]: -3,3
Package: SOT-23-6
Configuration: Single
MOSFET Type: N
VDS [V]: 30
RDS(ON) @10V [mΩ]: 24
RDS(ON) @4,5V [mΩ]: 34
VGS max, [V]: ±20
ID @T=25°C [A]: 6,5
Package: SOT-23-6
Configuration: Dual
MOSFET Type: P+P
VDS [V]: -20
RDS(ON) @4,5V [mΩ]: 85
VGS max, [V]: ±10
ID @T=25°C [A]: -3
Package: SOT-23
Configuration: Single
MOSFET Type: N
VDS [V]: 100
RDS(ON) @10V [mΩ]: 310
RDS(ON) @4,5V [mΩ]: 320
VGS max, [V]: ±20
ID @T=25°C [A]: 1,2
Package: SOT-23
Configuration: Single
MOSFET Type: P
VDS [V]: -20
RDS(ON) @4,5V [mΩ]: 33
VGS max, [V]: ±10
ID @T=25°C [A]: -5,8