What would you like to search for?

Es gibt 21587 Ergebnisse. Pro Seite werden 25 angezeigt.

• CRD E-701

  • Package: DO-35
  • IP typ.[mA]: 0.7 mA
  • Ip [mA]: 0.6 mA ... 0.9 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-562

  • Package: DO-35
  • IP typ.[mA]: 5.6 mA
  • Ip [mA]: 5 mA ... 6.5 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-452

  • Package: DO-35
  • IP typ.[mA]: 4.5 mA
  • Ip [mA]: 3.9 mA ... 5.1 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-501

  • Package: DO-35
  • IP typ.[mA]: 0.5 mA
  • Ip [mA]: 0.4 mA ... 0.6 mA
  • V [V]: 100 V
  • T [°C]: ... 150 °C

• CRD E-301

  • Package: DO-35
  • IP typ.[mA]: 0.3 mA
  • Ip [mA]: 0.2 mA ... 0.4 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-352

  • Package: DO-35
  • IP typ.[mA]: 3.5 mA
  • Ip [mA]: 3 mA ... 4.1 mA
  • V [V]: 50 V
  • T [°C]: ... 150 °C

• CRD E-272

  • Package: DO-35
  • IP typ.[mA]: 2.7 mA
  • Ip [mA]: 2.28 mA ... 3.1 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-202

  • Package: DO-35
  • IP typ.[mA]: 2 mA
  • Ip [mA]: 1.68 mA ... 2.3 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-153

  • Package: DO-35
  • IP typ.[mA]: 15 mA
  • Ip [mA]: 12 mA ... 18 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-152

  • Package: DO-35
  • IP typ.[mA]: 1.5 mA
  • Ip [mA]: 1.28 mA ... 1.7 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-123

  • Package: DO-35
  • IP typ.[mA]: 12 mA
  • Ip [mA]: 9.6 mA ... 14.4 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-102

  • Package: DO-35
  • IP typ.[mA]: 1 mA
  • Ip [mA]: 0.88 mA ... 1.3 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-103

  • Package: DO-35
  • IP typ.[mA]: 10 mA
  • Ip [mA]: 8 mA ... 12.4 mA
  • V [V]: 50 V
  • T [°C]: -30 °C ... 150 °C

• CRD E-101

  • Package: DO-35
  • IP typ.[mA]: 0.1 mA
  • Ip [mA]: 0.05 mA ... 0.21 mA
  • V [V]: 100 V
  • T [°C]: -30 °C ... 150 °C

• MOSFETs

  A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount...

• P5MBD012

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 11,5 / 30
  • RDS(ON) @4,5V [mΩ]: 16 / 45
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42 / -27

• S8MBG030

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 30 / 48
  • RDS(ON) @4,5V [mΩ]: 36 / 68
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5,9 / -4,7

• S8MBD032

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 32 / 40
  • RDS(ON) @4,5V [mΩ]: 45 / 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,7 / -7,2

• P6MNC4P2

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9,5 / 4,2
  • RDS(ON) @4,5V [mΩ]: 14,5 / 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 43 / 85

• S8MBG054

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 54 / 105
  • RDS(ON) @4,5V [mΩ]: 63 / 145
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4,5 / -3,5

• P6MNC6P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9 / 6
  • RDS(ON) @4,5V [mΩ]: 13 / 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 55 / 80

• TNMNG30H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3

• D2MNK3P2

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 3,2
  • RDS(ON) @4,5V [mΩ]: 4,6
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 180

• D1MNM047

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 47
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 22

• N3MNB8P0

  • Package: DFN3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 8
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 24