MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

TUMNG30H

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TUMNG30H

TVMNB350

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 350
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,5
  • Manufacturer: Eris
TVMNB350

TVMPB650

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 650
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: -0,25
  • Manufacturer: Eris
TVMPB650

S9MPB016

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -11
  • Manufacturer: Eris
S9MPB016

S9MNB022

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 6
  • Manufacturer: Eris
S9MNB022

TVMPB420

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 420
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: -0,7
  • Manufacturer: Eris
TVMPB420

TVMNB220

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 220
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,7
  • Manufacturer: Eris
TVMNB220

D1MNM9P2

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9.2
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
D1MNM9P2

D1MNM115

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 115
  • RDS(ON) @4,5V [mΩ]: 125
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
D1MNM115

D1MNM200

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 200
  • RDS(ON) @4,5V [mΩ]: 210
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
D1MNM200
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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