MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

A1MNM1P3

  • Package: TOLLA-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 1,3
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 395
  • Manufacturer: Eris
A1MNM1P3

D1MNM085

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: 100
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 15,65
  • Manufacturer: Eris
D1MNM085

D1MNM048

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 48
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
D1MNM048

D1MNM105

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 105
  • RDS(ON) @4,5V [mΩ]: 125
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 14,1
  • Manufacturer: Eris
D1MNM105

D1MNP105

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 105
  • RDS(ON) @4,5V [mΩ]: 115
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 20
  • Manufacturer: Eris
D1MNP105

D1MNP285

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 285
  • RDS(ON) @4,5V [mΩ]: 320
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
D1MNP285

D1MPD013

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 20
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -50
  • Manufacturer: Eris
D1MPD013

D1MPD015

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 15
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -45
  • Manufacturer: Eris
D1MPD015

D1MPM095

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 95
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -30
  • Manufacturer: Eris
D1MPM095

TNMNG100

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 2,3
  • Manufacturer: Eris
TNMNG100
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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