Schottky Barrier Rectifier

In electronics, a Schottky diode/rectifier is a diode/rectifier optimized for fast switching or a lower forward voltage drop. It conducts the current in the forward direction. It blocks it in the reverse direction. 
The Schottky diode consists of a metal layer and an n-type silicon layer. The electrons in the n-layer migrate to the metal layer. Charge carrier diffusion creates a barrier layer and an electric field. From a certain state, the electric field is so great that electrons can no longer migrate. The force of the electric field counteracts the migration of the electrons.                                                                                                                                                                                                                           Schottky diodess with low forward voltage have the lowest possible forward voltage drop and are intended for applications that require the highest possible efficiency.

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There are 10 of 1035 products shown.

EBRP10L45D

  • Package: DO-201AD
  • VRRM [V]: 45 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.47 V
  • Manufacturer: Eris
EBRP10L45D

EBRP10L200B

  • Package: DO-214AA (SMB)
  • VRRM [V]: 200 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.88 V
  • Manufacturer: Eris
EBRP10L200B

EBRP10L60B

  • Package: DO-214AA (SMB)
  • VRRM [V]: 60 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.63 V
  • Manufacturer: Eris
EBRP10L60B

EBRP10M45T

  • Package: TO-277
  • VRRM [V]: 45 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 300 μA
  • VF @ IF max. [V]: 0.52 V
  • Manufacturer: Eris
EBRP10M45T

EBRP10L45T

  • Package: TO-277
  • VRRM [V]: 45 V
  • IF [A]: 10 A
  • IFSM max. [A]: 250 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.47 V
  • Manufacturer: Eris
EBRP10L45T

EBRP10L50T

  • Package: TO-277
  • VRRM [V]: 50 V
  • IF [A]: 10 A
  • IFSM max. [A]: 250 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.47 V
  • Manufacturer: Eris
EBRP10L50T

EBRP10L60T

  • Package: TO-277
  • VRRM [V]: 60 V
  • IF [A]: 10 A
  • IFSM max. [A]: 250 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.5 V
  • Manufacturer: Eris
EBRP10L60T

EBRP10M60T

  • Package: TO-277
  • VRRM [V]: 60 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.6 V
  • Manufacturer: Eris
EBRP10M60T

EBRP10L45C

  • Package: DO-214AB (SMC)
  • VRRM [V]: 45 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.47 V
  • Manufacturer: Eris
EBRP10L45C

EBRP10L200T

  • Package: TO-277
  • VRRM [V]: 200 V
  • IF [A]: 10 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.87 V
  • Manufacturer: Eris
EBRP10L200T

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