Schottky Barrier Rectifier

In electronics, a Schottky diode/rectifier is a diode/rectifier optimized for fast switching or a lower forward voltage drop. It conducts the current in the forward direction. It blocks it in the reverse direction. 
The Schottky diode consists of a metal layer and an n-type silicon layer. The electrons in the n-layer migrate to the metal layer. Charge carrier diffusion creates a barrier layer and an electric field. From a certain state, the electric field is so great that electrons can no longer migrate. The force of the electric field counteracts the migration of the electrons.                                                                                                                                                                                                                           Schottky diodess with low forward voltage have the lowest possible forward voltage drop and are intended for applications that require the highest possible efficiency.

There are 10 of 1035 products shown.

EBRT40E150FCT

  • Package: ITO-220AB
  • VRRM [V]: 150 V
  • IF [A]: 40 A
  • IFSM max. [A]: 300 A
  • IR @ VRRM max. [μA]: 200 μA
  • VF @ IF max. [V]: 0.83 V
  • Manufacturer: Eris
EBRT40E150FCT

EBRT40E120FCT

  • Package: ITO-220AB
  • VRRM [V]: 120 V
  • IF [A]: 40 A
  • IFSM max. [A]: 250 A
  • IR @ VRRM max. [μA]: 200 μA
  • VF @ IF max. [V]: 0.81 V
  • Manufacturer: Eris
EBRT40E120FCT

EBRT40E200FCT

  • Package: ITO-220AB
  • VRRM [V]: 200 V
  • IF [A]: 40 A
  • IFSM max. [A]: 250 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.97 V
  • Manufacturer: Eris
EBRT40E200FCT

EBRP3X45AF

  • Package: DO-221AC (SMAF)
  • VRRM [V]: 45 V
  • IF [A]: 3 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 200 μA
  • VF @ IF max. [V]: 0.45 V
  • Manufacturer: Eris
EBRP3X45AF

EBRP3E60AF

  • Package: DO-221AC (SMAF)
  • VRRM [V]: 60 V
  • IF [A]: 3 A
  • IFSM max. [A]: 100 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.5 V
  • Manufacturer: Eris
EBRP3E60AF

EBRP5E45D

  • Package: DO-201AD
  • VRRM [V]: 45 V
  • IF [A]: 5 A
  • IFSM max. [A]: 100 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.48 V
  • Manufacturer: Eris
EBRP5E45D

EBRP5L60D

  • Package: DO-201AD
  • VRRM [V]: 60 V
  • IF [A]: 5 A
  • IFSM max. [A]: 100 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.6 V
  • Manufacturer: Eris
EBRP5L60D

EBRP5L200D

  • Package: DO-201AD
  • VRRM [V]: 200 V
  • IF [A]: 5 A
  • IFSM max. [A]: 100 A
  • IR @ VRRM max. [μA]: 10 μA
  • VF @ IF max. [V]: 0.87 V
  • Manufacturer: Eris
EBRP5L200D

EBRP5E60D

  • Package: DO-201AD
  • VRRM [V]: 60 V
  • IF [A]: 5 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.51 V
  • Manufacturer: Eris
EBRP5E60D

EBRP5E200D

  • Package: DO-201AD
  • VRRM [V]: 200 V
  • IF [A]: 5 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 10 μA
  • VF @ IF max. [V]: 0.82 V
  • Manufacturer: Eris
EBRP5E200D
Vrrm [V]

If [A]

Ifsm max. [A]

Ir @ Vrrm max. [A]

Vf @ If max. [V]

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