Schottky Barrier Rectifier

In electronics, a Schottky diode/rectifier is a diode/rectifier optimized for fast switching or a lower forward voltage drop. It conducts the current in the forward direction. It blocks it in the reverse direction. 
The Schottky diode consists of a metal layer and an n-type silicon layer. The electrons in the n-layer migrate to the metal layer. Charge carrier diffusion creates a barrier layer and an electric field. From a certain state, the electric field is so great that electrons can no longer migrate. The force of the electric field counteracts the migration of the electrons.                                                                                                                                                                                                                           Schottky diodess with low forward voltage have the lowest possible forward voltage drop and are intended for applications that require the highest possible efficiency.

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There are 10 of 1035 products shown.

EBRP40L45FCT

  • Package: ITO-220AB
  • VRRM [V]: 45 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.53 V
  • Manufacturer: Eris
EBRP40L45FCT

EBRP40L60CT

  • Package: TO-220AB
  • VRRM [V]: 60 V
  • IF [A]: 40 A
  • IFSM max. [A]: 250 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.55 V
  • Manufacturer: Eris
EBRP40L60CT

EBRT3E150AF

  • Package: DO-221AC (SMAF)
  • VRRM [V]: 150 V
  • IF [A]: 3 A
  • IFSM max. [A]: 80 A
  • IR @ VRRM max. [μA]: 200 μA
  • VF @ IF max. [V]: 0.8 V
  • Manufacturer: Eris
EBRT3E150AF

EBRP10M300T

  • Package: TO-277
  • VRRM [V]: 300 V
  • IF [A]: 10 A
  • IFSM max. [A]: 120 A
  • IR @ VRRM max. [μA]: 200 μA
  • VF @ IF max. [V]: 0.98 V
  • Manufacturer: Eris
EBRP10M300T

EBRT4E100A

  • Package: DO-214AC (SMA)
  • VRRM [V]: 100 V
  • IF [A]: 4 A
  • IFSM max. [A]: 50 A
  • IR @ VRRM max. [μA]: 25 μA
  • VF @ IF max. [V]: 0.66 V
  • Manufacturer: Eris
EBRT4E100A

MBR1020CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 20 V
  • IF [A]: 10 A
  • IFSM max. [A]: 120 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.6 V
  • Manufacturer: Eris
MBR1020CD2

ERS3200P

  • Package: SOD-123F
  • VRRM [V]: 200 V
  • IF [A]: 3 A
  • IFSM max. [A]: 80 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.92 V
  • Manufacturer: Eris
ERS3200P

MBR1060CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 60 V
  • IF [A]: 10 A
  • IFSM max. [A]: 120 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.75 V
  • Manufacturer: Eris
MBR1060CD2

MBR1050CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 50 V
  • IF [A]: 10 A
  • IFSM max. [A]: 120 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.75 V
  • Manufacturer: Eris
MBR1050CD2

MBR10150CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 150 V
  • IF [A]: 10 A
  • IFSM max. [A]: 130 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.92 V
  • Manufacturer: Eris
MBR10150CD2

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