Schottky Barrier Rectifier

In electronics, a Schottky diode/rectifier is a diode/rectifier optimized for fast switching or a lower forward voltage drop. It conducts the current in the forward direction. It blocks it in the reverse direction. 
The Schottky diode consists of a metal layer and an n-type silicon layer. The electrons in the n-layer migrate to the metal layer. Charge carrier diffusion creates a barrier layer and an electric field. From a certain state, the electric field is so great that electrons can no longer migrate. The force of the electric field counteracts the migration of the electrons.                                                                                                                                                                                                                           Schottky diodess with low forward voltage have the lowest possible forward voltage drop and are intended for applications that require the highest possible efficiency.

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There are 10 of 1035 products shown.

EBRP40L40SC

  • Package: DO-214AB (SMC)
  • VRRM [V]: 40 V
  • IF [A]: 40 A
  • IFSM max. [A]: 350 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.53 V
  • Manufacturer: Eris
EBRP40L40SC

EBRP40L45CT

  • Package: TO-220AB
  • VRRM [V]: 45 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.53 V
  • Manufacturer: Eris
EBRP40L45CT

EBRP40L45FCT

  • Package: ITO-220AB
  • VRRM [V]: 45 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.53 V
  • Manufacturer: Eris
EBRP40L45FCT

EBRP60L45FCT

  • Package: ITO-220AB
  • VRRM [V]: 45 V
  • IF [A]: 60 A
  • IFSM max. [A]: 300 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.53 V
  • Manufacturer: Eris
EBRP60L45FCT

EBRP10L150T

  • Package: TO-277
  • VRRM [V]: 150 V
  • IF [A]: 10 A
  • IFSM max. [A]: 180 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.83 V
  • Manufacturer: Eris
EBRP10L150T

EBRT4E100A

  • Package: DO-214AC (SMA)
  • VRRM [V]: 100 V
  • IF [A]: 4 A
  • IFSM max. [A]: 50 A
  • IR @ VRRM max. [μA]: 25 μA
  • VF @ IF max. [V]: 0.66 V
  • Manufacturer: Eris
EBRT4E100A

EBRT8E100T

  • Package: TO-277
  • VRRM [V]: 100 V
  • IF [A]: 8 A
  • IFSM max. [A]: 150 A
  • IR @ VRRM max. [μA]: 300 μA
  • VF @ IF max. [V]: 0.67 V
  • Manufacturer: Eris
EBRT8E100T

MBR1020CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 20 V
  • IF [A]: 10 A
  • IFSM max. [A]: 120 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.6 V
  • Manufacturer: Eris
MBR1020CD2

ERS3200P

  • Package: SOD-123F
  • VRRM [V]: 200 V
  • IF [A]: 3 A
  • IFSM max. [A]: 80 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.92 V
  • Manufacturer: Eris
ERS3200P

MBR1060CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 60 V
  • IF [A]: 10 A
  • IFSM max. [A]: 120 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.75 V
  • Manufacturer: Eris
MBR1060CD2

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