Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016
  • VDA 6.3

There are 10 of 2556 products shown.

P5MNG4P4

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 65
  • RDS(ON) @10V [mΩ]: 4,4
  • RDS(ON) @4,5V [mΩ]: 7,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 95
  • Manufacturer: Eris
P5MNG4P4

P3MND021

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 21
  • RDS(ON) @4,5V [mΩ]: 29
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
P3MND021

NJMNB7P2

  • Package: DFN2X3A-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 7,2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 11
  • Manufacturer: Eris
NJMNB7P2

N3MNA4P3

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 12
  • RDS(ON) @4,5V [mΩ]: 4,3
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNA4P3

NJMNB9P0

  • Package: DFN2X3A-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 9,5
  • Manufacturer: Eris
NJMNB9P0

N8MNC019

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 19
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
N8MNC019

N5MNB6P7

  • Package: DFN2X3-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 6,7
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 32
  • Manufacturer: Eris
N5MNB6P7

P5MNM9P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,5
  • RDS(ON) @4,5V [mΩ]: 14,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 58
  • Manufacturer: Eris
P5MNM9P5

TMMBC030

  • Package: SOT-23-6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 30 / 65
  • RDS(ON) @4,5V [mΩ]: 37 / 90
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4 / -3
  • Manufacturer: Eris
TMMBC030

TMMBB040

  • Package: SOT-23-6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 20 / -20
  • RDS(ON) @4,5V [mΩ]: 40 /100
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 3,8 / -2,5
  • Manufacturer: Eris
TMMBB040