Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016
  • VDA 6.3

There are 10 of 2556 products shown.

D2MNS020

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 200
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
D2MNS020

T3SNAL052

  • Package: TO-247-3L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 63
  • Manufacturer: Eris
T3SNAL052

T4SNAL028

  • Package: TO-247-4L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 28
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 114
  • Manufacturer: Eris
T4SNAL028

T4SNAL100

  • Package: TO-247-4L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
T4SNAL100

TNMNM55H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5500
  • RDS(ON) @4,5V [mΩ]: 6500
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TNMNM55H

TNMNM60H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 6000
  • RDS(ON) @4,5V [mΩ]: 9000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TNMNM60H

I2MNAA190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 13
  • Manufacturer: Eris
I2MNAA190

TNMNB065

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 65
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 2,3
  • Manufacturer: Eris
TNMNB065

TNMNB035

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 35
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMNB035

P3MNG6P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 10
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 66
  • Manufacturer: Eris
P3MNG6P0