Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

There are 10 of 2543 products shown.

S8MBD032

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 32 / 40
  • RDS(ON) @4,5V [mΩ]: 45 / 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,7 / -7,2
  • Manufacturer: Eris
S8MBD032

P6MNC4P2

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9,5 / 4,2
  • RDS(ON) @4,5V [mΩ]: 14,5 / 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 43 / 85
  • Manufacturer: Eris
P6MNC4P2

S8MBG054

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 54 / 105
  • RDS(ON) @4,5V [mΩ]: 63 / 145
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4,5 / -3,5
  • Manufacturer: Eris
S8MBG054

P6MNC6P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9 / 6
  • RDS(ON) @4,5V [mΩ]: 13 / 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 55 / 80
  • Manufacturer: Eris
P6MNC6P0

D1MNM047

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 47
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 22
  • Manufacturer: Eris
D1MNM047

TNMNG30H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TNMNG30H

D2MNK3P2

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 3,2
  • RDS(ON) @4,5V [mΩ]: 4,6
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 180
  • Manufacturer: Eris
D2MNK3P2

N3MNB8P0

  • Package: DFN3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 8
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 24
  • Manufacturer: Eris
N3MNB8P0

N8MPB028

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: -8.5
  • Manufacturer: Eris
N8MPB028

N8MNB013

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 9.9
  • Manufacturer: Eris
N8MNB013