Photodiodes and Phototransistors

Silicon photodiodes and phototransistors can detect radiation ranging between 400nm and 1,100nm. Since the maximum sensitivity is approx. 880nm, infrared radiation is particulary well detected by silicon components. Photodiodes and phototransistors are available with black epoxy resin mold, which suppresses the sensitivity within the visible spectral area. For slow optical switching applications, phototransistors are generally used, wherby photodiodes are used for measuring applications or data transmission.

Features

• Available as SMD or with pins
• Reception direction upwards, downwards, sideways
• Sensitivity angle: +/-20˚ … +/-80˚
• With or without daylight filter
• Phototransistors are also available with two chips
• Large area solderable photodiode chips or photodiode arrays for special sensor applications are available

Applications for photodiodes

• Fast infrared data transfer
• Optical measuring devices
• Light barriers

Applications for Phototransistors

• Optical switches (e.g. light barriers)
• Lightness/darkness sensors
• Simple data transmission at low data rate